H10D 30/662
Having a drift region having a doping concentration that is higher between
Official title: {having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region}
H10D30/662 (Having a drift region having a doping concentration that is higher between) appears on 369 US grants and 431 published applications in this corpus.
Search patents in H10D- Granted patents
- 369
- Published applications
- 431
- Assignees
- 130
- Inventors
- 652
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 3 | 1 |
| 2002 | 2 | 4 |
| 2003 | 8 | 14 |
| 2004 | 9 | 12 |
| 2005 | 8 | 5 |
| 2006 | 3 | 5 |
| 2007 | 4 | 7 |
| 2008 | 2 | 8 |
| 2009 | 5 | 8 |
| 2010 | 9 | 8 |
| 2011 | 9 | 11 |
| 2012 | 7 | 15 |
| 2013 | 9 | 8 |
| 2014 | 10 | 17 |
| 2015 | 24 | 27 |
| 2016 | 17 | 25 |
| 2017 | 19 | 23 |
| 2018 | 23 | 22 |
| 2019 | 26 | 13 |
| 2020 | 14 | 24 |
| 2021 | 22 | 23 |
| 2022 | 21 | 26 |
| 2023 | 20 | 33 |
| 2024 | 13 | 26 |
| 2025 | 20 | 36 |
| 2026 | 14 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Semiconductor high-power mosfet device185US 4,974,059 AInternational Rectifier Corporation · 1990
- High power MOSFET with low on-resistance and high breakdown voltage117US 4,376,286 AInternational Rectifier Corporation · 1983
- Power MOSFET device having low on-resistance and method114US 6,084,268 ASemiconductor Components Industries, LLC · 2000
- MOS-technology power device integrated structure and manufacturing process thereof108US 5,798,554 AConsorzio per la Ricerca sulla Microelettronica nel Mezzogiorno · 1998
- Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide91US 4,680,853 AInternational Rectifier Corporation · 1987