Electronic device with reduced switching oscillations

A device, comprising:

• a semiconductor body having a first electrical conductivity type;
• a current spread layer in a portion of the semiconductor body, the current spread layer having the first electrical conductivity type, the current spread layer having a doping value greater than a doping value of the portion of the semiconductor body;
• a source region in the current spread layer;
• a body region in the current spread layer;
• an edge termination region in the current spread layer, the edge termination region having a second electrical conductivity type;
• an implanted region in the current spread layer, the implanted region having the first electrical conductivity type, the implanted region having a doping value greater than the doping value of the current spread layer;
• a conductive layer on the edge termination region;
• a dielectric layer on the current spread layer and the conductive layer;
• a high-k dielectric region on the implanted region;
• and
• a gate terminal electrically coupled to the conducive layer, a portion of the gate terminal being spaced from the implanted region by the high-k dielectric region.

A device, comprising:

• a semiconductor body having an active region and an edge region that surrounds the active region, the semiconductor body having a first electrical conductivity type, the semiconductor body including a current spread layer having a first doping value;
• a source region in the active region and the current spread layer;
• a body region in the active region and the current spread layer;
• a gate region in the active region;
• an edge termination region in the active region, the edge region, and the current spread layer, the edge termination region having a second electrical conductivity type;
• an implanted region in the current spread layer and the edge region, the implanted region being spaced from the edge termination region by a portion of the current spread layer, the implanted region having the first electrical conductivity type, the implanted region having a second doping value greater than the first doping value;
• a dielectric layer on the current spread layer;
• a high-k dielectric region on the current spread layer and extending through the dielectric layer;
• and
• a gate terminal electrically coupled to the gate region, a portion of the gate terminal directly overlying the high-k dielectric region and the implanted region.