Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region located on the first electrode and electrically connected with the first electrode, the first semiconductor region being of a first conductivity type;
• a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region located on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a first conductive part located in the first semiconductor region with a first insulating part interposed;
• a first gate electrode located in the first insulating part, the first gate electrode facing the second semiconductor region in a second direction perpendicular to a first direction, the first direction being from the first electrode toward the first semiconductor region;
• a second conductive part located in the first semiconductor region with a second insulating part interposed, the second conductive part being separated from the first conductive part in the second direction;
• a second gate electrode located in the second insulating part, the second gate electrode facing the second semiconductor region in the second direction;
• a first connection part located higher than the second and third semiconductor regions, the first connection part extending in the second direction and contacting the first and second gate electrodes;
• and
• a second electrode located on the second and third semiconductor regions, the second electrode being electrically connected with the second semiconductor region, the third semiconductor region, the first conductive part, and the second conductive part,
• wherein a width of the first connection part in a third direction, which is perpendicular to the first direction and the second direction, is shorter than a distance between the first conductive part and the second conductive part in the second direction.