Silicon carbide power semiconductor device and method of manufacturing same

A silicon carbide power semiconductor device, comprising:

• multiple cell regions arranged along rows and columns and spaced apart from each other;
• a JFET region disposed between adjacent cell regions of the multiple cell regions;
• a shield region, which is a first conductivity type impurity doped region, disposed on a side of the JFET region;
• a gate electrode covering the JFET region;
• and
• a gate insulation film having a planar shape corresponding to the gate electrode under the gate electrode.

A method of manufacturing a silicon carbide power semiconductor device, the method comprising:

• forming a drift region on a substrate;
• forming a well region, which is a first conductivity type impurity doped region, and a shield region connected to the well region on a surface side of the drift region;
• forming a source region, which is a second conductivity type impurity doped region, within the well region;
• and
• forming a gate insulation film and a gate electrode on the drift region.