Process for manufacturing localized ion implants in silicon-carbide power electronic devices

A manufacturing process, comprising:

• forming a semiconductor body of silicon carbide having a surface;
• forming damaged regions at the surface separated from each other by implant portions in a direction parallel to the surface;
• and
• forming a shield region on the surface of the semiconductor body overlapping a respective damaged region of the damaged regions;
• performing a channeled ion implantation for implanting doping ions within the semiconductor body forming the implanted regions at the implant portions of the semiconductor body, and
• wherein the channeled ion implantation is performed in a self-aligned manner with respect to the damaged regions, constituting damaged regions of the silicon carbide crystallographic lattice to block propagation of the channeled ion implantation along an axis orthogonal to the surface in a depth direction of the semiconductor body.

A manufacturing process, comprising:

• forming a damaged region at a surface of a silicon-carbide substrate adjacent to an implant portion of the silicon-carbide at the surface of the silicon-carbide substrate;
• and
• performing a channeled ion implantation for implanting doping ions within the semiconductor body forming an implanted region at the implant portion of the semiconductor body and forming a random doping profile portion at the damage region, and
• wherein the channeled ion implantation is performed in a self-aligned manner with respect to the damaged region, crystallographic lattice of the damaged region of the silicon carbide crystallographic lattice blocks propagation of the channeled ion implantation along an axis transverse to the surface in a depth direction of the semiconductor body.