Stripe type semiconductor cell structure and semiconductor device

A stripe type semiconductor cell structure, comprising:

• a semiconductor body comprising:
• a drift layer of a first conductivity type;
• a current spreading layer of the first conductivity type arranged on the drift layer;
• spaced apart two well regions of a second conductivity type opposite to the first conductivity type arranged in the current spreading layer;
• a junction gate field-effect transistor (JFET) region of the first conductivity type arranged in the current spreading layer and defined between the two well regions;
• two source regions of the first conductivity type respectively disposed in the two well regions;
• two stripe-shaped body contact regions of the second conductivity type respectively disposed in the two well regions;
• and
• two stripe-shaped doping regions of the second conductivity type corresponding to the two stripe-shaped body contact regions, disposed underneath the two stripe-shaped body contact regions respectively, and arranged at a boundary between the drift layer and the current spreading layer, wherein the two stripe-shaped body contact region are connected to at least a portion of the two stripe-shaped doping regions corresponding thereto;
• a stripe-shaped gate structure on the semiconductor body and arranged over the JFET region and at least portions of the two source regions;
• and
• a drain electrode in contact with a surface of the semiconductor body away from the stripe-shaped gate structure.