Radiation hardened field effect transistor with doped buffer layer
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Yogesh Kumar Sharma
Life of this patent
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Abstract
A field effect transistor (FET) that is radiation-hardened against a single-event burnout effect comprises a volume of semiconductor material, a gate, a source, a drain, a drift region, and a doped drift region. The gate is positioned at a first end of the structure. The source is positioned at the first end of the structure. The drain is spaced apart from the source. The drift region is positioned between the source and the drain. The doped region includes a plurality of doped zones spaced apart from one another and positioned between the drain and the drift region. The doped drift region is configured to provide radiation hardening against a single event burnout.
Claims20
A field effect transistor (FET) that is radiation-hardened against a single-event burnout effect, the FET comprising:
- a volume of semiconductor material including vertically spaced first and second ends;
- a gate positioned adjacent the first end of the volume of semiconductor material;
- a source positioned adjacent the first end of the volume of semiconductor material;
- a drain spaced apart from the source;
- a drift region defined by the volume of semiconductor material positioned between the source and the drain;
- and
- a doped drift region including a plurality of doped zones spaced apart from one another and positioned between the drain and the drift region, the doped drift region configured to provide radiation hardening against a single event burnout.
A method of fabricating a field effect transistor comprising:
- forming a volume of semiconductor material to include first and second vertically spaced ends;
- forming a gate adjacent adjacent the first end of the volume of semiconductor material;
- forming a source adjacent adjacent the first end of the volume of semiconductor material;
- providing a drain spaced apart from the source, such that the volume of semiconductor material defines a drift region between the source and the drain;
- and
- forming a doped drift region between the drain and the drift region,
- the operation of forming the doped drift region including forming a plurality of doped zones spaced apart from one another and configured to provide radiation hardening against a single event burnout.
Dependencies are inferred from the claim text.