H10D 30/669
Having voltage-sensing or current-sensing structures
Official title: {having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells}
H10D30/669 (Having voltage-sensing or current-sensing structures) appears on 318 US grants and 333 published applications in this corpus.
Search patents in H10D- Granted patents
- 318
- Published applications
- 333
- Assignees
- 76
- Inventors
- 524
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 1 |
| 2002 | 1 | 1 |
| 2003 | 1 | 5 |
| 2004 | 2 | 1 |
| 2005 | 4 | 5 |
| 2006 | 2 | 8 |
| 2007 | 0 | 2 |
| 2008 | 5 | 11 |
| 2009 | 2 | 7 |
| 2010 | 9 | 10 |
| 2011 | 10 | 12 |
| 2012 | 10 | 13 |
| 2013 | 8 | 14 |
| 2014 | 22 | 11 |
| 2015 | 14 | 16 |
| 2016 | 17 | 19 |
| 2017 | 16 | 13 |
| 2018 | 13 | 17 |
| 2019 | 16 | 15 |
| 2020 | 11 | 26 |
| 2021 | 21 | 28 |
| 2022 | 23 | 22 |
| 2023 | 23 | 29 |
| 2024 | 16 | 23 |
| 2025 | 24 | 15 |
| 2026 | 5 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device25 Aug 2026US 12,721,209 B2Rohm Co., Ltd.
- Semiconductor device9 Jun 2026US 12,652,975 B2Fuji Electric Co., Ltd.
- Semiconductor device with MOS transistors each containing trenches and schottky junctions26 May 2026US 12,641,824 B2Mitsubishi Electric Corporation
- Semiconductor device including separated electrode pads and method of manufacturing the same19 May 2026US 12,631,677 B2Renesas Electronics Corporation
- Semiconductor device14 Apr 2026US 12,604,517 B2Fuji Electric Co., Ltd.
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Semiconductor die with a vertical transistor device13 Aug 2026US 2026/0239668 A1Infineon Technologies Austria AG
- Semiconductor device with a sensor device30 Jul 2026US 2026/0223678 A1Infineon Technologies Dresden GmbH
- Mosfet with monolithically integrated current sense18 Jun 2026US 2026/0173506 A1Semiconductor Components Industries, LLC
- Circuitry for allowing multiple sensors on a semiconductor die to share a common sensor pad16 Apr 2026US 2026/0104295 A1Wolfspeed, Inc.
Most cited
By later US patents
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Monolithic class D amplifier170US 5,973,368 A1999
- Methods of making power semiconductor devices with thick bottom oxide layer133US 8,143,124 B2Fairchild Semiconductor Corporation · 2012
- Insulated gate type semiconductor device and method of manufacturing thereof85US 6,323,518 B1Hitachi, Ltd. · 2001
- Current sensing circuit83US 4,553,084 AMotorola, Inc. · 1985