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US 12,721,209 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorYuki Nakano
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor layer that has a main surface, a main surface electrode that is arranged at the main surface, an insulating film that partially covers the main surface electrode such as to expose a portion of the main surface electrode, a mold layer that covers the insulating film such as to expose the main surface electrode, and a pad electrode that is arranged on the main surface electrode such as to be electrically connected to the main surface electrode.
Claims17
A semiconductor device comprising:
- a semiconductor layer that has a main surface and a side surface;
- a main surface electrode that is arranged at the main surface and has a peripheral edge positioned on a side of the side surface of the semiconductor layer;
- an insulating film that partially covers the main surface electrode such as to expose a portion of the main surface electrode and has a peripheral edge positioned on the side of the side surface of the semiconductor layer;
- a resin layer that covers the insulating film such as to expose the main surface electrode and has a resin side surface positioned on the side of the side surface of the semiconductor layer and a resin main surface extending along the main surface;
- and
- a pad electrode that is arranged on the main surface electrode such as to be electrically connected to the main surface electrode and has an electrode surface exposed from the resin main surface of the resin layer,
- wherein the peripheral edge of the main surface electrode, the peripheral edge of the insulating film, and the resin side surface of the resin layer are positioned in that order toward the side surface of the semiconductor layer,
- the resin side surface of the resin layer is formed flush with the side surface of the semiconductor layer, and
- the resin main surface of the resin layer is formed flush with the electrode surface of the pad electrode and constitutes an outer surface of the semiconductor device.
6 more elements
A semiconductor device comprising:
- a semiconductor layer that has a main surface and a side surface;
- a main surface electrode that is arranged at the main surface and has a peripheral edge positioned on a side of the side surface of the semiconductor layer;
- a photosensitive resin layer that covers a peripheral edge portion of the main surface electrode such as to expose an inner portion of the main surface electrode and has a peripheral edge positioned on a side of the side surface of the semiconductor layer;
- a thermosetting resin layer that covers the peripheral edge portion of the main surface electrode across the photosensitive resin layer such as to expose the inner portion of the main surface electrode, and has a resin side surface positioned on the side of the side surface of the semiconductor layer and a resin main surface extending along the main surface;
- and
- a pad electrode that is arranged on the inner portion of the main surface electrode and has an electrode surface exposed by the resin main surface of the thermosetting resin layer,
- wherein the peripheral edge of the main surface electrode, the peripheral edge of the photosensitive resin layer, and the resin side surface of the thermosetting resin layer are positioned in that order toward the side surface of the semiconductor layer,
- the resin side surface of the thermosetting resin layer is formed flush with the side surface of the semiconductor layer, and
- the resin main surface of the thermosetting resin layer is formed flush with the electrode surface of the pad electrode and constitutes an outer surface of the semiconductor device.
6 more elements
Dependencies are inferred from the claim text.