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US 6,323,518 B1Granted
Insulated gate type semiconductor device and method of manufacturing thereof
AssigneeHitachi, Ltd.
InventorsKozo Sakamoto, Yoshito Nakazawa, Eiji Yanokura
Life of this patent
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Abstract
Plural grooves are formed in a main surface of semiconductor layers on semiconductor substrate, and gate layers connected to a gate electrode are formed in the plural grooves through a gate insulating film, and then a body diffusion layer is formed between the gate layers, and afterwards, a source diffusion layer connected to a source electrode and a source diffusion layer connected to a source electrode are formed in an identical process.
Claims23
An insulated gate type semiconductor device comprising:
- a trench type insulated gate semiconductor element;
- a lateral type insulated gate semiconductor element concerning an operation of said trench type insulated gate semiconductor element,
- said trench type insulated gate semiconductor element including plural grooves provided in a main surface of a semiconductor layer in a semiconductor substrate, a gate layer connected to a first electrode, said gate layer being provided inside of said grooves through a gate insulating film, a second electrode provided on a surface of said semiconductor layer opposite to said main surface, and a diffusion layer connected to a third electrode, said diffusion layer being provided between each said gate layer,
- said lateral type insulated gate semiconductor element including a main gate layer connected to a gate electrode, said main gate layer being provided on said semiconductor layer in said semiconductor substrate through another gate insulating film, and a drain diffusion layer connected to a drain electrode and a source diffusion layer connected to a source electrode which are provided in regions of said semiconductor layer between which a region facing said main gate layer is put,
- wherein depth of said diffusion layer connected to said third electrode is not greater than depth of said source diffusion layer of said lateral type insulated gate semiconductor element.
2 more elements
An insulated gate type semiconductor device comprising:
- a trench type insulated gate semiconductor element;
- a diode concerning a gate-protection of said trench type insulated gate semiconductor element,
- said trench type insulated gate semiconductor element including plural grooves provided in a main surface of a semiconductor layer in a semiconductor substrate, gate layers connected to a first electrode which are provided inside and outside of said grooves through a gate insulating film, a second electrode provided on a surface of said semiconductor layer opposite to said main surface, and a diffusion layer connected to a third electrode, said diffusion layer being provided between said gate layers,
- said gate layers having gate layer regions on said grooves and another gate layer regions extending to said outside of said groove,
- said first electrode being connected to said first electrode on said another gate layer regions extending to said outside of said groove,
- said diode being provided on an insulating film on said main surface of said semiconductor layer in said semiconductor layer,
- said diode having film thickness smaller than that of said another gate layer regions extending to said outside of said groove for connection of said first electrode and said gate layer.
4 more elements
Dependencies are inferred from the claim text.