H10D 30/65
Lateral dmos [ldmos] fets
Official title: Lateral DMOS [LDMOS] FETs
H10D30/65 (Lateral dmos [ldmos] fets) appears on 3,604 US grants and 3,897 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,604
- Published applications
- 3,897
- Assignees
- 540
- Inventors
- 4,035
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 7 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 13 | 0 |
| 1987 | 6 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 8 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 12 | 0 |
| 1994 | 17 | 0 |
| 1995 | 30 | 0 |
| 1996 | 27 | 0 |
| 1997 | 18 | 0 |
| 1998 | 37 | 0 |
| 1999 | 26 | 0 |
| 2000 | 35 | 0 |
| 2001 | 39 | 22 |
| 2002 | 42 | 67 |
| 2003 | 58 | 71 |
| 2004 | 84 | 90 |
| 2005 | 71 | 88 |
| 2006 | 55 | 101 |
| 2007 | 62 | 107 |
| 2008 | 66 | 90 |
| 2009 | 79 | 105 |
| 2010 | 97 | 105 |
| 2011 | 91 | 116 |
| 2012 | 101 | 129 |
| 2013 | 142 | 163 |
| 2014 | 178 | 246 |
| 2015 | 245 | 261 |
| 2016 | 244 | 250 |
| 2017 | 252 | 234 |
| 2018 | 209 | 202 |
| 2019 | 219 | 178 |
| 2020 | 191 | 197 |
| 2021 | 153 | 159 |
| 2022 | 146 | 200 |
| 2023 | 129 | 184 |
| 2024 | 136 | 171 |
| 2025 | 136 | 192 |
| 2026 | 94 | 169 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage semiconductor device and method of manufacturing same29 Sep 2026US 12,751,041 B2DB HiTek Co., Ltd.
- Three-dimensional (3D) trenched metal-oxide-semiconductor field-effect transistor (MOSFET) device including first doped wells and second doped wells and method for fabricating the same29 Sep 2026US 12,751,043 B2Taipei Anjet Corporation
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Power IC having SOI structure283US 6,130,458 AKabushiki Kaisha Toshiba · 2000
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode205US 6,346,451 B1Philips Electronics North America Corporation · 2002
- Integrated circuits and power supplies204US 8,077,437 B2Enecsys Limited · 2011