High voltage semiconductor device and method of manufacturing same
AssigneeDB HiTek Co., Ltd.
InventorHye Won Du
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Abstract
A high-voltage semiconductor device which has a substrate, a gate field plate, a gate region, and a drift region and a method of manufacturing the high-voltage semiconductor device are described. The drift region has a first impurity region and a second impurity region covering at least one side wall of the first impurity region. The high-voltage semiconductor device is capable of alleviating electric field concentration at an edge of a gate field plate and of preventing deterioration of characteristics of specific on-resistance (Rsp) by having a second impurity region in the drift region covering the first impurity region.
Claims9
A high-voltage semiconductor device, comprising:
- a substrate;
- a gate field plate disposed at a substrate surface of the substrate;
- a gate region disposed on the substrate, wherein the gate region is partly disposed on the gate field plate;
- and
- a drift region disposed in the substrate,
- wherein the drift region comprises:
- a first impurity region disposed at the substrate surface;
- and
- a second impurity region covering at least one side wall of the first impurity region, and
- wherein the drift region has group 15 element impurity ion, and the second impurity region has group 15 element impurity ion having atomic weight smaller than atomic weight of the group 15 element impurity ion of the first impurity region.
A high-voltage semiconductor device, comprising:
- a substrate;
- a gate field plate disposed at a substrate surface of the substrate;
- a gate region disposed on the substrate, wherein the gate region is partly disposed on the gate field plate;
- a drift region of a second conductivity type disposed in the substrate;
- a body region of a first conductivity type disposed in the substrate;
- a source region of the second conductivity type disposed in the body region;
- and
- a drain region of the second conductivity type disposed in the drift region,
- wherein the drift region comprises:
- a first impurity region disposed at the substrate surface;
- and
- a second impurity region disposed below the first impurity region,
- wherein the first impurity region comprises:
- a protruding region protruding towards the source region from a part of the first impurity region facing the source region, and
- wherein the second impurity region comprises:
- a first layer disposed below the first impurity region in the substrate;
- and
- a second layer disposed below the first layer in the substrate.
Dependencies are inferred from the claim text.