H10D 30/658
Having trench gate electrodes
Official title: {having trench gate electrodes}
H10D30/658 (Having trench gate electrodes) appears on 508 US grants and 558 published applications in this corpus.
Search patents in H10D- Granted patents
- 508
- Published applications
- 558
- Assignees
- 142
- Inventors
- 655
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 2 |
| 2002 | 6 | 14 |
| 2003 | 17 | 15 |
| 2004 | 15 | 13 |
| 2005 | 8 | 11 |
| 2006 | 9 | 16 |
| 2007 | 6 | 11 |
| 2008 | 12 | 23 |
| 2009 | 8 | 14 |
| 2010 | 22 | 17 |
| 2011 | 9 | 11 |
| 2012 | 17 | 16 |
| 2013 | 19 | 26 |
| 2014 | 22 | 32 |
| 2015 | 33 | 36 |
| 2016 | 31 | 37 |
| 2017 | 41 | 43 |
| 2018 | 38 | 41 |
| 2019 | 44 | 25 |
| 2020 | 29 | 25 |
| 2021 | 15 | 26 |
| 2022 | 24 | 25 |
| 2023 | 17 | 27 |
| 2024 | 18 | 20 |
| 2025 | 22 | 15 |
| 2026 | 13 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Three-dimensional (3D) trenched metal-oxide-semiconductor field-effect transistor (MOSFET) device including first doped wells and second doped wells and method for fabricating the same29 Sep 2026US 12,751,043 B2Taipei Anjet Corporation
- Split gate trench device29 Sep 2026US 12,751,071 B2Excelliance MOS Corporation
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor device8 Oct 2026US 2026/0314068 A1Vanguard International Semiconductor Corporation
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Semiconductor devices with channel and junction structures and methods of fabrication thereof6 Aug 2026US 2026/0231466 A1
- Rectifier23 Jul 2026US 2026/0213673 A1Rohm Co., Ltd.
Most cited
By later US patents
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Integrated circuits and power supplies204US 8,077,437 B2Enecsys Limited · 2011
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Parallel-stripe type semiconductor device126US 6,294,818 B1Fuji Electric Co., Ltd. · 2001
- High voltage MOSFET with geometrical depletion layer enhancement126US 6,400,003 B1Koninklijke Philips Electronics N. V. · 2002