Semiconductor device and methods of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorYoung Gwang Yoon
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Abstract
A semiconductor device includes a buried gate structure including: a gate trench formed in a substrate; a gate insulating layer conformally formed over a bottom surface and an inner wall of the gate trench; a dipole inducing layer conformally formed over a bottom surface and an inner wall of the gate insulating layer; a dipole diffusion barrier layer conformally formed over a bottom surface and an inner wall of the dipole inducing layer; and a gate electrode formed over the dipole diffusion barrier layer to fill a lower region of the gate trench.
Claims20
A semiconductor device comprising a buried gate structure,
- wherein the buried gate structure comprises:
- a gate trench formed in a substrate;
- a gate insulating layer conformally formed over a bottom surface and an inner wall of the gate trench;
- a dipole inducing layer conformally formed over a bottom surface and an inner wall of the gate insulating layer;
- a dipole diffusion barrier layer conformally formed over a bottom surface and an inner wall of the dipole inducing layer;
- and
- a gate electrode formed over the dipole diffusion barrier layer to fill a lower region of the gate trench.
A semiconductor device comprising a buried gate structure,
- wherein the buried gate structure comprises:
- a gate trench formed in a substrate;
- a gate insulating layer conformally formed over a bottom surface and an inner wall of the gate trench, the gate insulating layer including a dipole material;
- a dipole diffusion barrier layer formed over the gate insulating layer;
- and
- a gate electrode formed over the dipole diffusion barrier layer to fill a lower region of the gate trench,
- wherein the dipole diffusion barrier layer comprises a compound of dipole material and fluorine.
Dependencies are inferred from the claim text.