Semiconductor device and methods of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorYoung Gwang YOON
Life of this patent
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Abstract
A semiconductor device includes a buried gate structure including: a gate trench formed in a substrate; a gate insulating layer conformally formed over a bottom surface and an inner wall of the gate trench; a dipole inducing layer conformally formed over a bottom surface and an inner wall of the gate insulating layer; a dipole diffusion barrier layer conformally formed over a bottom surface and an inner wall of the dipole inducing layer; and a gate electrode formed over the dipole diffusion barrier layer to fill a lower region of the gate trench.
Claims20
A method of manufacturing a semiconductor device comprising forming a buried gate structure,
- wherein forming the buried gate structure comprises:
- forming a gate trench in a substrate;
- forming a gate insulating layer over a bottom surface and an inner wall of the gate trench;
- forming a dipole material layer over a bottom surface and an inner wall of the gate insulating layer;
- forming a dipole inducing layer between the gate insulating layer and the dipole material layer by performing an annealing process;
- forming a dipole diffusion barrier layer over a surface of the dipole material layer;
- and
- forming a gate electrode over the dipole diffusion barrier layer.
A method of manufacturing a semiconductor device comprising forming a buried gate structure,
- wherein forming the buried gate structure comprises:
- forming a gate trench in a substrate;
- forming a gate insulating layer over a bottom surface and an inner wall of the gate trench;
- forming a dipole material layer over a bottom surface and an inner wall of the gate insulating layer;
- forming a dipole diffusion barrier layer over a bottom surface and an inner wall of the dipole material layer;
- forming a sacrificial layer over a bottom surface and an inner wall of the dipole diffusion barrier layer;
- forming a dipole inducing layer between the gate insulating layer and the dipole material layer by performing an annealing process;
- exposing the dipole diffusion barrier layer by removing the sacrificial layer;
- and
- forming a gate electrode over the dipole diffusion barrier layer.
Dependencies are inferred from the claim text.