Lateral mosfet having a vertical channel
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Mazhar Hoque
Life of this patent
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Abstract
A field-effect transistor (FET) may include a volume of semiconductor material that presents a top end, a bottom end, a left side, and a right side. A source and a drain may be positioned at the top end of the volume of semiconductor material and be laterally spaced apart. A trench in the volume of semiconductor material may be positioned laterally between the source and drain, with the trench extending from the top end toward the bottom end of the volume of semiconductor material and presenting a lateral trench width and a vertical trench depth. A well may extend laterally along at least the lateral trench width. A first drift region may be positioned at least in part between the well and the trench.
Claims20
A field-effect transistor (FET) comprising:
- a volume of semiconductor material including a top end, a bottom end spaced vertically from the top end, a left side, and a right side spaced laterally from the left side;
- a source positioned at the top end of the volume of semiconductor material;
- a drain positioned at the top end of the volume of semiconductor material, with the source and drain being laterally spaced apart;
- a trench in the volume of semiconductor material laterally between the source and the drain, the trench extending from the top end of the volume of semiconductor material toward the bottom end and presenting a lateral trench width and a vertical trench depth;
- a well extending laterally along at least the lateral trench width;
- and
- a first drift region positioned at least in part between the well and the trench.
A method of making a field-effect transistor (FET) comprising:
- providing a volume of semiconductor material that includes a top end, a bottom end spaced vertically from the top end, a left side, and a right side spaced laterally from the left side;
- providing a source at the top end of the volume of semiconductor material;
- providing a drain at the top end of the volume of semiconductor material at a location spaced laterally from the source;
- forming a trench in the volume of semiconductor material laterally between the source and the drain;
- and
- providing a well below the trench so that a first drift region is positioned at least in part between the well and trench,
- the operation of providing the well including extending the well along at least a lateral width of the trench.
Dependencies are inferred from the claim text.