H10D 30/657
Having substrates comprising insulating layers
Official title: {having substrates comprising insulating layers, e.g. SOI-LDMOS transistors}
H10D30/657 (Having substrates comprising insulating layers) appears on 604 US grants and 582 published applications in this corpus.
Search patents in H10D- Granted patents
- 604
- Published applications
- 582
- Assignees
- 171
- Inventors
- 861
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 9 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 13 | 0 |
| 1999 | 9 | 0 |
| 2000 | 16 | 0 |
| 2001 | 11 | 4 |
| 2002 | 16 | 22 |
| 2003 | 18 | 29 |
| 2004 | 35 | 25 |
| 2005 | 18 | 26 |
| 2006 | 10 | 15 |
| 2007 | 15 | 28 |
| 2008 | 14 | 18 |
| 2009 | 19 | 22 |
| 2010 | 24 | 19 |
| 2011 | 18 | 15 |
| 2012 | 18 | 27 |
| 2013 | 24 | 21 |
| 2014 | 26 | 30 |
| 2015 | 24 | 27 |
| 2016 | 39 | 36 |
| 2017 | 34 | 20 |
| 2018 | 23 | 29 |
| 2019 | 33 | 23 |
| 2020 | 23 | 22 |
| 2021 | 14 | 19 |
| 2022 | 20 | 28 |
| 2023 | 21 | 23 |
| 2024 | 19 | 20 |
| 2025 | 12 | 19 |
| 2026 | 10 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing the same8 Sep 2026US 12,733,204 B2Rohm Co., Ltd.
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Semiconductor structure9 Jun 2026US 12,652,823 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power semiconductor device and methods of producing a power semiconductor device19 May 2026US 12,635,175 B2Infineon Technologies Austria AG
- High voltage semiconductor device and method of manufacturing same28 Apr 2026US 12,615,798 B2DB HiTek Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0314068 A1Vanguard International Semiconductor Corporation
- Semiconductor device10 Sep 2026US 2026/0271333 A1Murata Manufacturing Co., Ltd.
- Semiconductor device13 Aug 2026US 2026/0239662 A1Minebea Power Semiconductor Device Inc.
- Semiconductor device and method for forming the same13 Aug 2026US 2026/0239738 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and fabrication method thereof16 Jul 2026US 2026/0206551 A1Vanguard International Semiconductor Corporation
Most cited
By later US patents
- Power IC having SOI structure283US 6,130,458 AKabushiki Kaisha Toshiba · 2000
- Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode205US 6,346,451 B1Philips Electronics North America Corporation · 2002
- Integrated circuits and power supplies204US 8,077,437 B2Enecsys Limited · 2011
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Trenched high breakdown voltage semiconductor device170US 6,040,600 AMitsubishi Denki Kabushiki Kaisha · 2000