Semiconductor device

A semiconductor device, comprising:

• a field-effect transistor on an insulating surface;
• an interlayer insulator film that covers the field-effect transistor;
• and
• an electroconductive field plate on the interlayer insulator film,
• wherein
• the field-effect transistor includes a source region with first electroconductivity, a body region with second electroconductivity, a drift region with the first electroconductivity, a drain region with the first electroconductivity, and a gate electrode,
• when the insulating surface is viewed in plan, the gate electrode has a shape elongated in a first direction, and the body region is below the gate electrode to overlap the gate electrode,
• the source region and the drift region are at positions to hold the body region therebetween in a second direction orthogonal to the first direction, and the drain region is at a position farther than the drift region is when viewed from the body region,
• the field-effect transistor further includes a body contact region with the second electroconductivity that protrudes from a body contact connection portion, or a portion of an edge of the body region located closer to the source region, toward a portion where the source region is disposed,
• the field plate is electrically connected to the source region, and
• when the insulating surface is viewed in plan, the field plate extends from the source region at least to the drift region while intersecting the gate electrode, and has a shape not overlapping a first half line extending in the second direction from a middle point of the body contact connection portion toward the drain region.