Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• an n-type semiconductor layer;
• a p-type drift region formed in a surface layer portion of the semiconductor layer;
• an n-type body region formed in the surface layer portion of the semiconductor layer so as to be spaced apart from or adjacent to the drift region;
• a p-type drain region formed in a surface layer portion of the drift region;
• a p-type source region formed in a surface layer portion of the body region;
• a gate insulating film formed on a surface of the semiconductor layer so as to straddle the drift region and the body region;
• and
• a polysilicon gate formed on the gate insulating film,
• wherein a region extending from the source region in the body region to a side edge of the drift region on the body region side is a channel region, and
• wherein the polysilicon gate includes a p-type first portion facing at least a portion of the channel region with the gate insulating film interposed therebetween, and an n-type second portion facing at least a portion of the drift region with the gate insulating film interposed therebetween.