Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ming Pan, Chia-Ta Hsieh, Po-Wei Liu, Yun-Chi Wu
Life of this patent
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Abstract
A semiconductor structure includes a semiconductor substrate, first to third isolation structures, and a conductive feature. The first to third isolation structures are over the semiconductor substrate and spaced apart from each other. The semiconductor substrate comprises a region surrounded by a sidewall of the first isolation structure and a first sidewall of the second isolation structure. The conductive feature extends vertically in the semiconductor substrate and between the between the second and third isolation structures, wherein the conductive feature has a rounded corner adjoining a second sidewall of the second isolation structure opposite the first sidewall of the second isolation structure.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- first to third isolation structures over the semiconductor substrate and spaced apart from each other, wherein the semiconductor substrate comprises a first semiconductor region bounded by a sidewall of the first isolation structure and a first sidewall of the second isolation structure;
- and
- a conductive feature extending vertically in the semiconductor substrate and between the second and third isolation structures, wherein the conductive feature has a first rounded corner adjoining a second sidewall of the second isolation structure opposite the first sidewall of the second isolation structure, wherein a width between opposite sidewalls of the first semiconductor region is less than a width between opposite sidewalls of the conductive feature.
A semiconductor structure, comprising:
- a semiconductor substrate;
- a transistor over the semiconductor substrate;
- a first conductive feature extending vertically in the semiconductor substrate and surrounding the transistor;
- an isolation structure over the semiconductor substrate and surrounding the first conductive feature and the transistor, wherein the isolation structure has a first corner facing the first conductive feature and a second corner facing away from the first conductive feature in a top view, and the first corner is more rounded than the second corner;
- and
- a semiconductor ring surrounding the first conductive feature in the top view, wherein in the top view, a width between opposite sidewalls of the semiconductor ring is less than a width between opposite sidewalls of the first conductive feature.
A semiconductor structure, comprising:
- a semiconductor base substrate;
- a buried oxide layer;
- a semiconductor layer over the semiconductor base substrate;
- a first isolation structure over the semiconductor layer and defining a first region of the semiconductor layer;
- a transistor over the first region of the semiconductor layer;
- a second isolation structure over the semiconductor layer and spaced apart from the first isolation structure;
- a conductive feature extending through the semiconductor layer and the buried oxide layer and connected to the semiconductor base substrate, wherein the conductive feature is between the first and second isolation structures, wherein the second isolation structure has a first corner facing the conductive feature and a second corner facing away from the conductive feature in a top view, and the first corner is more rounded than the second corner;
- and
- a semiconductor ring surrounding the conductive feature in the top view, wherein in the top view, a width between opposite sidewalls of the semiconductor ring is less than a width between opposite sidewalls of the conductive feature.
Dependencies are inferred from the claim text.