Semiconductor device

Abstract

A semiconductor device capable of suppressing a saturation current in a MOSFET includes a drift region of a first conductivity type, a body region of a second conductivity type, a channel region formed in the body region, a source region of the first conductivity type, a drain region of the first conductivity type provided on the same main surface side as the source region, a gate electrode, and a gate insulating film provided between the gate electrode and the channel region. A separation region in which an insulating film is provided inside a trench is provided between the drain region and the body region. The drift region has a first extension portion having a longitudinal direction in a first direction and is sandwiched by the body region when viewed in plan view, and constitutes a part of a current path between the channel region and the drain region.

Dependencies are inferred from the claim text.