Semiconductor device

A semiconductor device comprising:

• a chip having a main surface;
• a drain region formed at a surface layer portion of the main surface;
• a source region formed at the surface layer portion of the main surface at a distance from the drain region;
• a channel inversion region formed on a side of the source region between the drain region and the source region in the surface layer portion of the main surface;
• a drift region formed in a region between the drain region and the channel inversion region in the surface layer portion of the main surface;
• a gate insulating film having a first portion that covers the channel inversion region on the main surface and a second portion that covers the drift region on the main surface;
• and
• a gate electrode having a first electrode portion covering the first portion and a second electrode portion led out from the first electrode portion onto the second portion so as to partially expose the second portion,
• wherein the first electrode portion of the gate electrode overlaps a part of the source region, and
• the second electrode portion of the gate electrode is led out in a comb-teeth shape from the first electrode portion toward the drain region side in a plan view.