H10D 30/611
Having multiple independently-addressable gate electrodes influencing the same channel
Official title: {having multiple independently-addressable gate electrodes influencing the same channel (FinFETs having multiple distinct gate electrodes H10D30/6215; multi-gate TFT H10D30/6733)}
H10D30/611 (Having multiple independently-addressable gate electrodes influencing the same channel) appears on 1,400 US grants and 1,440 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,400
- Published applications
- 1,440
- Assignees
- 381
- Inventors
- 2,462
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 6 | 0 |
| 1981 | 7 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 13 | 0 |
| 1993 | 6 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 9 | 0 |
| 1997 | 11 | 0 |
| 1998 | 16 | 0 |
| 1999 | 13 | 0 |
| 2000 | 8 | 0 |
| 2001 | 10 | 0 |
| 2002 | 13 | 26 |
| 2003 | 27 | 20 |
| 2004 | 19 | 28 |
| 2005 | 23 | 28 |
| 2006 | 16 | 21 |
| 2007 | 18 | 19 |
| 2008 | 18 | 40 |
| 2009 | 22 | 33 |
| 2010 | 20 | 28 |
| 2011 | 34 | 37 |
| 2012 | 26 | 43 |
| 2013 | 31 | 50 |
| 2014 | 59 | 72 |
| 2015 | 88 | 100 |
| 2016 | 92 | 90 |
| 2017 | 91 | 117 |
| 2018 | 91 | 79 |
| 2019 | 103 | 114 |
| 2020 | 111 | 100 |
| 2021 | 66 | 80 |
| 2022 | 62 | 69 |
| 2023 | 51 | 64 |
| 2024 | 63 | 69 |
| 2025 | 50 | 70 |
| 2026 | 45 | 43 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Field effect transistor having same gate and source doping, cell structure, and preparation method29 Sep 2026US 12,751,031 B2PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Semiconductor power device with improved ruggedness25 Aug 2026US 12,720,813 B2Nexperia B. V.
- Silicon carbide semiconductor device25 Aug 2026US 12,720,832 B2Fuji Electric Co., Ltd.
- Metal oxide semiconductor field effect transistors (MOSFET) including deep P-wells and methods of forming same18 Aug 2026US 12,713,672 B2The Research Foundation for The State University of New York
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Semiconductor device with reduced leakage24 Sep 2026US 2026/0293263 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate trench mosfet with shielded gate electrode in step trench24 Sep 2026US 2026/0293283 A1Nami MOS CO., LTD.
- Trench gate mosfet and a method for fabricating the same17 Sep 2026US 2026/0282439 A1Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd.
Most cited
By later US patents
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FinFET body contact and method of making same412US 8,735,993 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical system integration289US 7,402,897 B2Elm Technology Corporation · 2008
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Diffusionless conductor/oxide semiconductor field effect transistor and methods for making and using the same255US 5,162,879 ATexas Instruments Incorporated · 1992