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US 8,735,993 B2Granted
FinFET body contact and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Hsiung Lo, Jam-Wem Lee, Wun-Jie Lin, Jen-Chou Tseng
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
Claims19
A semiconductor device comprising:
- a substrate;
- a fin raised above the substrate;
- the fin comprising:
- a first source/drain region in the fin;
- a first body contact in the fin;
- a first portion of the fin, the first portion extending from the first source/drain region to the first body contact, wherein the first portion is a semiconductor material:
- and
- a second source/drain region in the fin, the second source/drain region laterally spaced from the first source drain region in a direction opposite of the first body contact;
- a second body contact in the fin;
- and
- a second portion of the fin, the second portion extending from the second body contact to a nearest adjacent source/drain region, wherein the second portion is a semiconductor material.
8 more elements
A semiconductor device comprising:
- a substrate;
- a first semiconductor fin extending from the substrate, wherein the first semiconductor fin comprises:
- a first source/drain region in the first semiconductor fin;
- a second source/drain region in the first semiconductor fin;
- a first gate structure on a top surface and sidewalls of the first semiconductor fin, wherein the first gate structure is laterally between the first source/drain region and the second source/drain region;
- a first body contact in the first semiconductor fin;
- and
- a second gate structure on a top surface and sidewalls of the first semiconductor fin, wherein the second gate structure is laterally between the first source/drain region and the first body contact, and wherein the second gate structure is aligned with the first body contact.
5 more elements
A fin field-effect transistor (FinFET) device comprising:
- a semiconductor fin extending from a substrate, the semiconductor fin comprising:
- a first source/drain region in the semiconductor fin;
- a second source/drain region in the semiconductor fin;
- a channel region interposed between the first and second source/drain regions;
- a first body contact in the semiconductor fin;
- a first active gate over the channel region;
- a first dummy gate laterally between the first source/drain region and the first body contact;
- a second body contact in the semiconductor fin;
- a second portion of the semiconductor fin, the second portion extending from the second body contact to the second source/drain region, the second portion comprising a semiconductor material;
- and
- a second dummy gate over the second portion of the semiconductor fin.
8 more elements
Dependencies are inferred from the claim text.