US 12,757,423 B2 · Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method

Abstract

Disclosed are a structure, including a junction field effect transistor (JFET), and a method of forming the structure. The JFET includes a channel region and source and drain regions above the channel region. The JFET also includes a first gate region below the channel region and a second gate region above the channel region positioned laterally between and isolated from the source and drain regions. The first gate region underlies the drain region and is offset from the source region and at least that portion of the second gate region adjacent to the source region. Specifically, the first gate region is either completely offset from both the source region and the second gate region or is completely offset from the source region and only partially underlies the second gate region. In the JFET, resistance on is reduced and saturation drain current is increased without significantly impacting breakdown or pinch-off voltages.

Claims9

Dependent claims

A structure comprising:

a semiconductor layer, wherein the semiconductor layer is a semiconductor substrate;
a transistor including, within the semiconductor layer:
a channel region;
a drain region and a source region above the channel region;
a first gate region below the channel region;
and
a second gate region above the channel region positioned laterally between the drain region and the source region, wherein the first gate region underlies the drain region and is offset horizontally from the source region and at least a portion of the second gate region adjacent to the source region;
and
a buried well region within the semiconductor substrate, wherein on the buried well region, the channel region is positioned laterally adjacent to the first gate region and further extends over the first gate region.

6 more elements

Dependencies are inferred from the claim text.

Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method

Life of this patent

Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method

Life of this patent

Abstract

Claims9