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US 12,720,813 B2Granted
Semiconductor power device with improved ruggedness
AssigneeNexperia B.V.
InventorsGeorgio El Zammar, Tim Böttcher, Massimo Cataldo Mazzillo, Sönke Habenicht
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Abstract
Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.
Claims19
A semiconductor power device, comprising:
- a semiconductor body including a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate;
- an active area and a termination area adjacent the active area arranged in the epitaxial layer;
- wherein the termination area comprises a plurality of first rings of a first polarity, and a plurality of second rings of a second polarity different from the first polarity, wherein the plurality of first rings extends farther towards the semiconductor substrate than the plurality of second rings;
- wherein the semiconductor substrate and the epitaxial layer have the second polarity;
- wherein the epitaxial layer has a dopant concentration associated with the second polarity that is smaller than a dopant concentration in the second rings associated with the second polarity;
- and
- wherein the termination area further comprises a junction termination extension (JTE) border of the first polarity type, and wherein the first and second rings are separately formed from and arranged inside the junction termination extension border.
4 more elements
Dependencies are inferred from the claim text.