H10D 30/615
Comprising a mos gate electrode and at least one non-mos gate electrode
Official title: {comprising a MOS gate electrode and at least one non-MOS gate electrode}
H10D30/615 (Comprising a mos gate electrode and at least one non-mos gate electrode) appears on 227 US grants and 211 published applications in this corpus.
Search patents in H10D- Granted patents
- 227
- Published applications
- 211
- Assignees
- 117
- Inventors
- 361
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 5 | 0 |
| 2002 | 3 | 10 |
| 2003 | 11 | 5 |
| 2004 | 9 | 6 |
| 2005 | 2 | 4 |
| 2006 | 4 | 2 |
| 2007 | 1 | 0 |
| 2008 | 1 | 2 |
| 2009 | 2 | 4 |
| 2010 | 2 | 5 |
| 2011 | 3 | 3 |
| 2012 | 5 | 2 |
| 2013 | 3 | 9 |
| 2014 | 6 | 10 |
| 2015 | 9 | 14 |
| 2016 | 19 | 13 |
| 2017 | 11 | 14 |
| 2018 | 13 | 10 |
| 2019 | 15 | 18 |
| 2020 | 17 | 15 |
| 2021 | 10 | 10 |
| 2022 | 9 | 7 |
| 2023 | 7 | 13 |
| 2024 | 6 | 20 |
| 2025 | 6 | 13 |
| 2026 | 16 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Field effect transistor having same gate and source doping, cell structure, and preparation method29 Sep 2026US 12,751,031 B2PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Semiconductor power device with improved ruggedness25 Aug 2026US 12,720,813 B2Nexperia B. V.
- Silicon carbide semiconductor device25 Aug 2026US 12,720,832 B2Fuji Electric Co., Ltd.
- Metal oxide semiconductor field effect transistors (MOSFET) including deep P-wells and methods of forming same18 Aug 2026US 12,713,672 B2The Research Foundation for The State University of New York
- Silicon carbide semiconductor device17 Sep 2026US 2026/0282478 A1Fuji Electric Co., Ltd.
- Jfet with asymmetric gates19 Feb 2026US 2026/0052722 A1Microchip Technology Incorporated
- Semiconductor structure and semiconductor device30 Oct 2025US 2025/0336849 A1Enkris Semiconductor, Inc.
- Trench gate wide bandgap junction field effect transistors with termination regions having planar upper surfaces30 Oct 2025US 2025/0338571 A1Wolfspeed, Inc.
- Vertical jfet semiconductor devices with avalanche current ballast resistance18 Sep 2025US 2025/0293152 A1Wolfspeed, Inc.
Most cited
By later US patents
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Low threshold voltage, high performance junction transistor206US 5,719,422 ASun Microsystems, Inc. · 1998
- Silicon carbide switching device with rectifying-gate174US 5,396,085 ANorth Carolina State University · 1995
- Trench-gated vertical combination JFET and MOSFET devices143US 6,163,052 AAdvanced Micro Devices, Inc. · 2000
- Method for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits135US 5,877,049 AAdvanced Micro Devices, Inc. · 1999