H10D 30/701
Igfets having ferroelectric gate insulators
Official title: {IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs}
H10D30/701 (Igfets having ferroelectric gate insulators) appears on 1,222 US grants and 1,647 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,222
- Published applications
- 1,647
- Assignees
- 234
- Inventors
- 1,700
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 7 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 14 | 0 |
| 1999 | 18 | 0 |
| 2000 | 20 | 0 |
| 2001 | 18 | 13 |
| 2002 | 17 | 20 |
| 2003 | 25 | 22 |
| 2004 | 20 | 17 |
| 2005 | 18 | 22 |
| 2006 | 10 | 11 |
| 2007 | 14 | 18 |
| 2008 | 6 | 7 |
| 2009 | 4 | 10 |
| 2010 | 11 | 11 |
| 2011 | 7 | 14 |
| 2012 | 9 | 8 |
| 2013 | 7 | 8 |
| 2014 | 10 | 11 |
| 2015 | 6 | 15 |
| 2016 | 17 | 31 |
| 2017 | 30 | 31 |
| 2018 | 36 | 54 |
| 2019 | 50 | 78 |
| 2020 | 72 | 121 |
| 2021 | 91 | 154 |
| 2022 | 124 | 211 |
| 2023 | 143 | 240 |
| 2024 | 162 | 223 |
| 2025 | 147 | 173 |
| 2026 | 101 | 124 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,405 B2Samsung Electronics Co., Ltd.
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material6 Oct 2026US 12,757,449 B2Samsung Electronics Co., Ltd.
- Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device22 Sep 2026US 12,745,427 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel15 Sep 2026US 12,740,102 B2The Trustees of the University of Pennsylvania
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric devices and methods of forming the same8 Oct 2026US 2026/0313911 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer174US 5,572,052 AMitsubishi Denki Kabushiki Kaisha · 1996
- Floating-gate transistor with a non-linear intergate dielectric151US 4,888,630 ATexas Instruments Incorporated · 1989
- CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class140US 5,830,270 ALockheed Martin Energy Systems, Inc. · 1998
- Method for making an electronic device including a poled superlattice having a net electrical dipole moment126US 7,517,702 B2Mears Technologies, Inc. · 2009
- Non-volatile memory cell having dual gate electrodes114US 5,751,037 ASony Corporation · 1998