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US 12,740,102 B2Granted
Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel
AssigneeThe Trustees of the University of Pennsylvania
InventorsDeep Jariwala, Roy H Olsson, III, Xiwen Liu, Eric Andrew Stach, Kwan-Ho Kim
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Abstract
Provided are ferroelectric field effect transistor (FeFET) based memory devices. These devices include aluminum scandium nitride (AlScN) as a ferroelectric dielectric and 2D chalcogenide semiconductors as a semiconductor channel in the transistor. The disclosed materials, devices and fabrication processes involved are compatible with back end of the line (BEOL) processing of a silicon based microchip and also compatible with silicon microprocessor fabrication.
Claims23
A component, comprising:
- a portion of AlScN that is 0001 or 0002-oriented crystal in form;
- a semiconducting channel portion,
- the channel portion being in electronic communication with the portion of AlScN, and
- the channel portion comprising a material characterized as a 2D semiconducting metal chalcogenide,
- a 111-oriented metal back-gate electrode contacting the portion of AlScN;
- a metallic source electrode in electronic communication with the channel portion;
- and
- a metallic drain electrode in electronic communication with the channel portion,
- the metallic source electrode being superposed over the semiconducting channel portion, and the semiconducting channel portion being superposed over the portion of AlScN such that the metallic source electrode is superposed over the portion of AlScN.
6 more elements
Dependencies are inferred from the claim text.