Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material

A capacitor, comprising:

• a first electrode;
• a second electrode facing the first electrode;
• and
• a dielectric layer between the first electrode and the second electrode,
• wherein the dielectric layer includes
• a first region where a ferroelectric crystal structure is dominant, and
• a second region where a non-ferroelectric structure is dominant,
• wherein the second electrode includes
• a first pattern region facing the first region of the dielectric layer, and
• a second pattern region facing the second region of the dielectric layer and
• wherein the first pattern region includes a first thickness in a first direction transverse to an upper surface of the dielectric laver, and the second pattern region includes a second thickness in the first direction, the second thickness different from the first thickness.

An electronic apparatus, comprising:

• a field effect transistor;
• and
• a capacitor electrically connected to the field effect transistor,
• wherein the field effect transistor includes
• a source region,
• a drain region,
• a channel between the source region and the drain region,
• a gate insulating layer configured to cover an upper surface of the channel, and
• a gate electrode configured to cover an upper surface of the gate insulating layer,
• wherein the gate insulating layer includes
• a first region where a ferroelectric crystal structure is dominant, and
• a second region where a non-ferroelectric structure is dominant,
• wherein the gate electrode includes
• a first pattern region facing the first region of the gate insulating layer, and
• a second pattern region facing the second region of the gate insulating layer, and
• wherein the first pattern region includes a first thickness in a first direction transverse to the upper surface of the gate insulating layer, and the second pattern region includes a second thickness in the first direction, the second thickness different from the first thickness.