H10D 30/637
Lateral igfets having no inversion channels
Official title: {Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs}
H10D30/637 (Lateral igfets having no inversion channels) appears on 529 US grants and 490 published applications in this corpus.
Search patents in H10D- Granted patents
- 529
- Published applications
- 490
- Assignees
- 220
- Inventors
- 1,014
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
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| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 7 | 0 |
| 1990 | 7 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 9 | 0 |
| 1997 | 8 | 0 |
| 1998 | 12 | 0 |
| 1999 | 12 | 0 |
| 2000 | 9 | 0 |
| 2001 | 11 | 2 |
| 2002 | 9 | 17 |
| 2003 | 15 | 10 |
| 2004 | 13 | 13 |
| 2005 | 10 | 15 |
| 2006 | 9 | 18 |
| 2007 | 7 | 10 |
| 2008 | 8 | 17 |
| 2009 | 13 | 12 |
| 2010 | 16 | 8 |
| 2011 | 8 | 9 |
| 2012 | 10 | 15 |
| 2013 | 13 | 5 |
| 2014 | 10 | 23 |
| 2015 | 20 | 28 |
| 2016 | 37 | 45 |
| 2017 | 42 | 41 |
| 2018 | 33 | 22 |
| 2019 | 29 | 24 |
| 2020 | 12 | 22 |
| 2021 | 17 | 18 |
| 2022 | 21 | 25 |
| 2023 | 9 | 14 |
| 2024 | 20 | 35 |
| 2025 | 14 | 28 |
| 2026 | 14 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation260US 5,559,368 AThe Regents of the University of California · 1996
- Fermi threshold silicon-on-insulator field effect transistor198US 5,151,759 AThunderbird Technologies, Inc. · 1992
- Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits170US 6,703,688 B1AmberWave Systems Corporation · 2004
- Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation169US 5,780,899 AThe Regents of the University of California · 1998