Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Ling LEE, Ming-Wei LAI, I-Cheng CHANG, Chao-Cheng CHEN, Yu-Jen CHIEN
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Abstract
A semiconductor device includes a substrate and a transistor. The transistor is disposed on the substrate and includes a gate, an active channel layer and an insulation layer. The gate is disposed on the substrate. The active channel layer is disposed above the gate. The insulation layer is disposed between the gate and the active channel layer. The active channel layer includes an upper portion and a lower portion, and the upper portion has a doping concentration greater than that of the lower portion.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- a transistor on the substrate, comprising:
- a gate on the substrate;
- an active channel layer above the gate;
- and
- an insulation layer between the gate and the active channel layer;
- wherein the active channel layer comprising an upper portion and a lower portion, and the upper portion has a doping concentration greater than that of the lower portion.
A semiconductor device, comprising:
- a substrate;
- and
- a transistor on the substrate, comprising:
- a gate on the substrate;
- an active channel layer above the gate;
- and
- an insulation layer between the gate and the active channel layer;
- wherein the active channel layer comprising a first portion and a second portion, and the first portion has a doping concentration different from that of the second portion.
A manufacturing method for a semiconductor device, comprising:
- providing a substrate;
- and
- forming a transistor, comprising:
- forming a gate on the substrate;
- forming an insulation layer on the gate;
- and
- forming an active channel layer on the insulation layer;
- wherein the active channel layer comprising an upper portion and a lower portion, and the upper portion has a doping concentration greater than that of the lower portion.
Dependencies are inferred from the claim text.