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US 6,703,688 B1Granted
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
AssigneeAmberWave Systems Corporation
InventorEugene A. Fitzergald
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Abstract
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
Claims19
A surface-channel transistor comprising:
- a substrate;
- a relaxed layer thereon, the relaxed layer having an average surface roughness of no more than 2 nm;
- a strained channel layer disposed above the relaxed layer;
- and
- a gate stack on the channel layer.
2 more elements
Dependencies are inferred from the claim text.