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US 12,740,097 B2Granted
Structure with isolated well
AssigneeGlobalFoundries U.S. Inc.
InventorsSiva Kumar Chinthu, Venkatesh P. Gopinath
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a structure with an isolated well and methods of manufacture. The structure includes: a floating well of a first dopant type within a semiconductor substrate; a second well of a second dopant type within the floating well of the first dopant type; a reverse bias diode at a junction between the floating well and the semiconductor substrate; and a forward bias diode at a junction between the floating well and the second well.
Claims17
A structure comprising:
- a floating well of a first dopant type within a semiconductor substrate;
- a second well of a second dopant type within the floating well of the first dopant type;
- a reverse bias diode at a junction between the floating well and the semiconductor substrate;
- a forward bias diode at a junction between the floating well and the second well;
- a contact connecting to the second well;
- and
- deep trench isolation structures between the floating well and the second well, and within a body of the second well.
4 more elements
A structure comprising:
- a semiconductor substrate comprising a floating well of a first dopant type and a well of an opposite dopant type to the first dopant type;
- a buried insulator layer above the semiconductor substrate;
- a semiconductor on insulator material above the insulator buried layer, the semiconductor on insulator material comprising diffusion regions;
- a gate structure on the semiconductor on insulator material between the diffusion regions;
- a bias contact connecting to the well;
- and
- deep trench isolation structures between the floating well and the well, and within a body of the well.
4 more elements
A method comprising:
- forming a floating well of a first dopant type within a semiconductor substrate;
- forming a second well of a second dopant type within the floating well of the first dopant type;
- forming a contact connecting to the second well;
- and
- forming deep trench isolation structures between the floating well and the second well, and within a body of the second well,
- wherein a first diode is formed at a junction between the floating well and the semiconductor substrate, and a second diode is formed at a junction between the floating well and the second well.
3 more elements
Dependencies are inferred from the claim text.