Anti-Radiation Field Effect Transistor Device and Application Thereof in Anti-Radiation Environment

Abstract

The present invention provides an anti-radiation field effect transistor device and application thereof in an anti-radiation environment, which are used for solving the problem that an anti-radiation method of a field effect transistor in the prior art is limited. The field effect transistor device includes a substrate; a spacer disposed on the substrate; a semiconductor stack disposed on the spacer, wherein the semiconductor stack includes an active layer disposed on the spacer, the active layer including a source region, a drain region and a channel region between the source region and the drain region; and a gate structure matched with the active layer. In a direction perpendicular to the substrate, the spacer is disposed around the semiconductor stack; the spacer includes an electric field adjustment part which intrudes into the channel region in the thickness direction of the active layer; and the electric field adjustment part penetrates through the channel region in the width direction of the active layer.

Dependencies are inferred from the claim text.