H10D 30/68
Floating-gate igfets
Official title: Floating-gate IGFETs
H10D30/68 (Floating-gate igfets) appears on 8,040 US grants and 7,609 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,040
- Published applications
- 7,609
- Assignees
- 865
- Inventors
- 7,566
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 6 | 0 |
| 1978 | 5 | 0 |
| 1979 | 8 | 0 |
| 1980 | 6 | 0 |
| 1981 | 20 | 0 |
| 1982 | 15 | 0 |
| 1983 | 21 | 0 |
| 1984 | 18 | 0 |
| 1985 | 14 | 0 |
| 1986 | 26 | 0 |
| 1987 | 24 | 0 |
| 1988 | 22 | 0 |
| 1989 | 33 | 0 |
| 1990 | 37 | 0 |
| 1991 | 71 | 0 |
| 1992 | 57 | 0 |
| 1993 | 54 | 0 |
| 1994 | 68 | 0 |
| 1995 | 79 | 0 |
| 1996 | 63 | 0 |
| 1997 | 99 | 0 |
| 1998 | 128 | 0 |
| 1999 | 182 | 0 |
| 2000 | 178 | 0 |
| 2001 | 225 | 75 |
| 2002 | 197 | 234 |
| 2003 | 231 | 230 |
| 2004 | 273 | 347 |
| 2005 | 247 | 392 |
| 2006 | 299 | 448 |
| 2007 | 277 | 475 |
| 2008 | 262 | 440 |
| 2009 | 288 | 393 |
| 2010 | 330 | 293 |
| 2011 | 309 | 299 |
| 2012 | 291 | 312 |
| 2013 | 314 | 326 |
| 2014 | 354 | 371 |
| 2015 | 367 | 416 |
| 2016 | 414 | 340 |
| 2017 | 328 | 274 |
| 2018 | 277 | 241 |
| 2019 | 262 | 262 |
| 2020 | 239 | 264 |
| 2021 | 215 | 266 |
| 2022 | 200 | 256 |
| 2023 | 196 | 207 |
| 2024 | 184 | 190 |
| 2025 | 138 | 144 |
| 2026 | 86 | 114 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,744,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Neuromorphic synapse device with excellent linearity characteristics and operating method thereof15 Sep 2026US 12,738,315 B2Korea Advanced Institute of Science and Technology
- Reconfigurable complementary metal oxide semiconductor device and method15 Sep 2026US 12,740,143 B2GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices having through-insulating structures and data storage systems including the same8 Oct 2026US 2026/0314382 A1Samsung Electronics Co., Ltd.
- Biological material sensing semiconductor device1 Oct 2026US 2026/0298867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic system including the same1 Oct 2026US 2026/0304759 A1Samsung Electronics Co., Ltd.
- Device leakage and yield for cells1 Oct 2026US 2026/0304839 A1QUALCOMM Incorporated
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- EEPROM with split gate source side injection602US 5,313,421 ASunDisk Corporation · 1994