H10D 30/681
Having only two programming levels
Official title: {having only two programming levels (Floating gate IGFETs programmable by two single electrons H10D30/688)}
H10D30/681 (Having only two programming levels) appears on 4,643 US grants and 4,137 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,643
- Published applications
- 4,137
- Assignees
- 622
- Inventors
- 4,887
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 6 | 0 |
| 1978 | 5 | 0 |
| 1979 | 8 | 0 |
| 1980 | 6 | 0 |
| 1981 | 20 | 0 |
| 1982 | 15 | 0 |
| 1983 | 21 | 0 |
| 1984 | 18 | 0 |
| 1985 | 14 | 0 |
| 1986 | 26 | 0 |
| 1987 | 24 | 0 |
| 1988 | 22 | 0 |
| 1989 | 33 | 0 |
| 1990 | 37 | 0 |
| 1991 | 70 | 0 |
| 1992 | 54 | 0 |
| 1993 | 48 | 0 |
| 1994 | 65 | 0 |
| 1995 | 68 | 0 |
| 1996 | 52 | 0 |
| 1997 | 71 | 0 |
| 1998 | 79 | 0 |
| 1999 | 102 | 0 |
| 2000 | 88 | 0 |
| 2001 | 110 | 40 |
| 2002 | 95 | 117 |
| 2003 | 116 | 122 |
| 2004 | 144 | 176 |
| 2005 | 130 | 211 |
| 2006 | 162 | 275 |
| 2007 | 155 | 313 |
| 2008 | 171 | 295 |
| 2009 | 179 | 258 |
| 2010 | 219 | 225 |
| 2011 | 221 | 204 |
| 2012 | 209 | 179 |
| 2013 | 192 | 202 |
| 2014 | 221 | 198 |
| 2015 | 203 | 234 |
| 2016 | 214 | 175 |
| 2017 | 180 | 122 |
| 2018 | 124 | 94 |
| 2019 | 120 | 126 |
| 2020 | 110 | 105 |
| 2021 | 99 | 116 |
| 2022 | 81 | 98 |
| 2023 | 83 | 85 |
| 2024 | 72 | 67 |
| 2025 | 49 | 55 |
| 2026 | 29 | 45 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,744,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Reconfigurable complementary metal oxide semiconductor device and method15 Sep 2026US 12,740,143 B2GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Non-volatile memory device1 Sep 2026US 12,727,204 B2Iotmemory Technology Inc.
- Neuromorphic device having three-dimensional stacked structure and method of fabricating the same18 Aug 2026US 12,711,365 B2Korea Advanced Institute of Science and Technology (KAIST)
- Method for manufacturing non-volatile memory device24 Sep 2026US 2026/0293217 A1Iotmemory Technology Inc.
- Method for forming semiconductor structure13 Aug 2026US 2026/0239615 A1Winbond Electronics Corp.
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory device and method for forming the same6 Aug 2026US 2026/0231408 A1Winbond Electronics Corp.
- Non-Volatile Memory Cell and Memory6 Aug 2026US 2026/0231410 A1Chengdu Analog Circuit Technology Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- EEPROM with split gate source side injection602US 5,313,421 ASunDisk Corporation · 1994
- Flash EEPROM memory systems having multistate storage cells579US 5,043,940 A1991