H10D 30/682
Programmed by injection of carriers through a conductive insulator
Official title: {programmed by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction}
H10D30/682 (Programmed by injection of carriers through a conductive insulator) appears on 41 US grants and 18 published applications in this corpus.
Search patents in H10D- Granted patents
- 41
- Published applications
- 18
- Assignees
- 13
- Inventors
- 76
- Latest grant
- 9 Apr 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 3 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 1 | 7 |
| 2016 | 2 | 3 |
| 2017 | 4 | 1 |
| 2018 | 2 | 2 |
| 2019 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Nonvolatile memory device9 Apr 2019US 10,256,288 B2National Institute of Advanced Industrial Science and Technology
- Methods and structures for a split gate memory cell structure11 Dec 2018US 10,153,349 B2NXP USA, Inc.
- Tight pitch vertical transistor EEPROM20 Nov 2018US 10,134,917 B2International Business Machines Corporation
- Non-volatile memory for high rewrite cycles application30 May 2017US 9,666,279 B2eMemory Technology Inc.
- Single-poly nonvolatile memory cell2 May 2017US 9,640,259 B2eMemory Technology Inc.
- Nonvolatile memory device25 Oct 2018US 2018/0308854 A1National Institute of Advanced Industrial Science and Technology
- Tight pitch vertical transistor eeprom20 Sep 2018US 2018/0269329 A1International Business Machines Corporation
- Methods and structures for a split gate memory cell structure6 Jul 2017US 2017/0194444 A1NXP USA, Inc.
- Non-volatile memory for high rewrite cycles application20 Oct 2016US 2016/0307629 A1eMemory Technology Inc.
- Single-poly nonvolatile memory cell17 Mar 2016US 2016/0079251 A1eMemory Technology Inc.
Most cited
By later US patents
- Three-dimensional direct-write EEPROM arrays and fabrication methods185US 5,467,305 AInternational Business Machines Corporation · 1995
- Semiconductor device having silicon-rich layer and method of manufacturing such a device181US 6,709,928 B1Cypress Semiconductor Corporation · 2004
- Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices145US 6,818,558 B1Cypress Semiconductor Corporation · 2004
- Electrically alterable double dense memory130US 4,380,057 AInternational Business Machines Corporation · 1983
- Three-dimensional direct-write EEPROM arrays and fabrication methods120US 5,617,351 AInternational Business Machines Corporation · 1997