Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices
AssigneeCypress Semiconductor Corporation
InventorsManuj Rathor, Krishnaswamy Ramkumar, Fred Jenne, Loren Lancaster
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Abstract
A method of forming a charge storing layer is disclosed. According to an embodiment, a method may include the steps of forming a first portion of a charge storing layer with a first gas flow rate ratio (step 102), forming at least a second portion of the charge storing layer by changing to a second gas flow rate ratio that is different than the first gas flow rate ratio (step 104), and forming at least a third portion of the charge storing layer by changing to a third gas flow rate ratio that is different than the second gas flow rate ratio (step 106).
Claims20
A method for forming a charge storing layer of a semiconductor device, comprising the steps of:
- forming a first portion of a charge storing layer with a plurality of source gases introduced to a reaction chamber at a first gas flow rate ratio between at least two of the source gases;
- and
- forming at least a second portion of the charge storing layer by changing to a second gas flow rate ratio between the at least two source gases.
A method of forming a charge storing dielectric, comprising the steps of:
- forming at least one charge trapping portion of a charge storing layer by switching from a first flow rate ratio of source gases to a second flow rate ratio of the source gases.
A method of forming a nonvolatile transistor, comprising the steps of:
- forming a multilayered dielectric between a tunnel dielectric and a top insulating layer by temporarily changing the rate at which a first constituent element is introduced into a reaction chamber with respect to a second constituent element.
Dependencies are inferred from the claim text.