Nonvolatile memory device

A three-terminal type nonvolatile memory device comprising:

• second-conductive type first and second semiconductor regions formed on a first-conductive type semiconductor substrate, the second-conductive type first and second semiconductor regions being separated from and opposing each other;
• and
• a gate structure body provided on a surface of the semiconductor substrate between the first and second semiconductor regions, the gate structure body comprising a capacitor structure and a metal electrode on the capacitor structure, the capacitor structure including a monolayer-level O-M1-O layer on a two different insulating films, oxygen (O) and a metallic element (M1) other than component elements of the insulating films being chemically bonded in the monolayer-level O-M1-O layer;
• and
• a field effect transistor structure having the metal electrode serving as a gate electrode, and the first and second semiconductor regions respectively serving as drain and source regions,
• wherein information is memorized by changing strength or polarities of interface dipoles that the O-M1-O layer induces through an electrical signal applied to the gate electrode.