Semiconductor device having silicon-rich layer and method of manufacturing such a device
AssigneeCypress Semiconductor Corporation
InventorsFred Jenne, Loren Thomas Lancaster
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Abstract
A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).
Claims20
A method of forming a semiconductor device insulating layer, comprising the steps of:
- forming a tunneling dielectric;
- and
- forming a charge storing dielectric comprising a silicon nitride layer formed on the surface of the tunneling dielectric, the charge storing dielectric including a charge trapping dielectric layer having a greater percentage of a first type element than the charge storing dielectric.
A method of fabricating a nonvolatile semiconductor device, comprising the steps of:
- forming an insulated gate field effect dielectric layer having a multilayered charge storing dielectric formed between a tunneling dielectric and top dielectric, the multilayered charge storing dielectric comprising at least two different non-oxide dielectric materials.
Dependencies are inferred from the claim text.