Neuromorphic device having three-dimensional stacked structure and method of fabricating the same

A method of fabricating a neuromorphic device, comprising:

• forming a neuron device on a substrate;
• forming an interlayer insulating layer on the substrate to cover the neuron device;
• forming a vertical connection wiring electrically connected to the neuron device in the interlayer insulating layer;
• and
• forming a synapse device having a Schottky barrier transistor structure, vertically aligned with the neuron device on the interlayer insulating layer and electrically connected to the vertical connection wiring, the synapse device including a channel, a floating gate for a synaptic operation, a control gate, a source having a first Schottky junction with the channel, and a drain having a second Schottky junction with the channel,
• wherein the neuron device includes a transistor device, the transistor device including a channel region, a source region, a drain region, a gate insulating layer, and a gate electrode, and
• the vertical connection wiring is configured to electrically interconnect the source of the synapse device and the source region of the transistor device and the drain of the synapse device and the drain region of the transistor device are not electrically connected to each other.