H10D 30/688
Programmed by two single electrons
Official title: {programmed by two single electrons}
H10D30/688 (Programmed by two single electrons) appears on 105 US grants and 59 published applications in this corpus.
Search patents in H10D- Granted patents
- 105
- Published applications
- 59
- Assignees
- 45
- Inventors
- 149
- Latest grant
- 23 Aug 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 11 | 0 |
| 2001 | 18 | 6 |
| 2002 | 9 | 15 |
| 2003 | 15 | 4 |
| 2004 | 9 | 7 |
| 2005 | 4 | 5 |
| 2006 | 6 | 7 |
| 2007 | 3 | 2 |
| 2008 | 6 | 5 |
| 2009 | 4 | 1 |
| 2010 | 3 | 4 |
| 2011 | 2 | 2 |
| 2012 | 4 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Electrically programmable and eraseable memory device23 Aug 2016US 9,425,325 B2Cypress Semiconductor Corporation
- Electrically programmable and erasable memory device and method of fabrication thereof21 Jan 2014US 8,633,074 B2Spansion LLC
- Random number generating device11 Dec 2012US 8,330,160 B2Kabushiki Kaisha Toshiba
- Quantum dot transistor2 Oct 2012US 8,278,647 B2Honda Motor Co., Ltd.
- Semiconductor storage device and manufacturing method thereof12 Jun 2012US 8,198,665 B2Kabushiki Kaisha Toshiba
- Electrically programmable and eraseable memory device8 May 2014US 2014/0124848 A1Spansion LLC
- Charge storage nanostructure25 Aug 2011US 2011/0204331 A1QuNano AB
- Single-charge tunneling device5 May 2011US 2011/0103138 A1
- Quantum dot memory9 Dec 2010US 2010/0308303 A1Academia Sinica
- Quantum dot transistor22 Jul 2010US 2010/0181551 A1Honda Motor Co., Ltd.
Most cited
By later US patents
- Memory using insulator traps313US 6,545,314 B2Micron Technology, Inc. · 2003
- Nano-structure memory device215US 5,714,766 AInternational Business Machines Corporation · 1998
- Memory device with improved charge storage barrier structure165US 5,952,692 AHitachi, Ltd. · 1999
- Method for forming single electron resistor memory163US 6,514,820 B2Micron Technology, Inc. · 2003
- Single-electron floating-gate MOS memory156US 6,069,380 ARegents of the University of Minnesota · 2000