Method for forming single electron resistor memory

Abstract

Method for forming a memory device that includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconductor material and a plurality of islands of semiconductor material. The islands have a maximum dimension of three to five nanometers and are surrounded by an insulator having a thickness of between five and twenty nanometers. The islands and the surrounding insulator are formed in pores extending into the semiconductor material between the first and second electrodes. As a result, the memory cells formed from the method are able to provide consistent, externally observable changes in response to the presence or absence of a single electron on the island.

Dependencies are inferred from the claim text.