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US 8,198,665 B2Granted
Semiconductor storage device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsKenji Kawabata, Hisataka Meguro
Life of this patent
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Abstract
A semiconductor storage device includes: a substrate having a semiconductor layer at least on a surface thereof; and a plurality of quantum dot elements forming a charge storage layer formed above the semiconductor layer via a first insulating film that becomes a tunnel insulating film in such a manner that the quantum dot elements are connected with a bit line in series, wherein each quantum dot element forms a single electron memory.
Claims13
A semiconductor storage device comprising:
- a substrate having at least one semiconductor layer located on a surface of the substrate;
- and
- a plurality of quantum dot elements forming a charge storage layer formed above the semiconductor layer via a first insulating film that becomes a tunnel insulating film in such a manner that the quantum dot elements are connected with a bit line in series,
- wherein each quantum dot element forms a single-electron memory.
1 more element
Dependencies are inferred from the claim text.