Charge storage nanostructure
AssigneeQuNano AB
InventorsLars Samuelson, Claes Thelander
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Abstract
The present invention relates to a nanostructured device for charge storage. In particular the invention relates to a charge storage device that can be used for memory applications. According to the invention the device comprise a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end, and a second nanowire with a second wrap gate arranged around a portion of its length. The charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire. The current can be related to written (charged) or unwritten (no charge) state, and hence a memory function is established.
Claims11
A charge storage device suitable for memory applications, comprising nanowires as functional parts, characterized by
- a first nanowire with a first wrap gate arranged around a portion of its length, and a charge storing terminal connected to one end of the first nanowire;
- a second nanowire with a second wrap gate (3) arranged around a portion of its length;
- and wherein
- the charge storing terminal is connected to the second wrap gate, whereby a charge stored on the charge storing terminal can affect a current in the second nanowire.
Dependencies are inferred from the claim text.