Neuromorphic synapse device with excellent linearity characteristics and operating method thereof

An operating method of a neuromorphic synapse device including a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a charge transfer layer region formed on the floating gate region, and a control gate region formed on the charge transfer layer region, the method comprising:

• generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied;
• and
• performing a weight update operation by using the potential difference, wherein the perform of the weight update operation includes one of:
• implementing weight depression by releasing at least one charge stored in the floating gate region;
• or
• implementing weight potentiation by storing the at least one charge into the floating gate region;
• wherein movement of the at least one charge for the weight update operation occurs between the control gate region and the floating gate region through the charge transfer layer region, the charge transfer layer region being formed considering only weight update characteristics.