H10D 30/687
Having more than two programming levels
Official title: {having more than two programming levels}
H10D30/687 (Having more than two programming levels) appears on 517 US grants and 502 published applications in this corpus.
Search patents in H10D- Granted patents
- 517
- Published applications
- 502
- Assignees
- 147
- Inventors
- 735
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 15 | 0 |
| 1999 | 13 | 0 |
| 2000 | 19 | 0 |
| 2001 | 24 | 5 |
| 2002 | 14 | 16 |
| 2003 | 19 | 28 |
| 2004 | 30 | 43 |
| 2005 | 34 | 60 |
| 2006 | 44 | 60 |
| 2007 | 50 | 65 |
| 2008 | 33 | 52 |
| 2009 | 40 | 39 |
| 2010 | 40 | 17 |
| 2011 | 24 | 22 |
| 2012 | 11 | 8 |
| 2013 | 12 | 9 |
| 2014 | 16 | 18 |
| 2015 | 12 | 11 |
| 2016 | 16 | 14 |
| 2017 | 9 | 10 |
| 2018 | 9 | 4 |
| 2019 | 4 | 4 |
| 2020 | 7 | 5 |
| 2021 | 3 | 2 |
| 2022 | 3 | 5 |
| 2023 | 3 | 4 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neuromorphic synapse device with excellent linearity characteristics and operating method thereof15 Sep 2026US 12,738,315 B2Korea Advanced Institute of Science and Technology
- Semiconductor device8 Apr 2025US 12,272,756 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory having both volatile and non-volatile functionality and method of operating2 Jan 2024US 11,862,245 B2Zeno Semiconductor, Inc.
- Semiconductor device with multiple floating gates for multi-level capacitance changes7 Nov 2023US 11,810,983 B2Unist (Ulsan National Institute of Science and Technology)
- Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator26 Sep 2023US 11,769,542 B2Micron Technology, Inc.
- Non-volatile memory and corresponding manufacturing method13 Aug 2026US 2026/0237437 A1STMicroelectronics International N. V.
- Field Effect Transistor Constructions and Methods of Programming Field Effect Transistors to One Of At Least Three Different Programmed States14 Dec 2023US 2023/0402082 A1Micron Technology, Inc.
- Semiconductor device24 Aug 2023US 2023/0268446 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device capable of multi-level driving1 Jun 2023US 2023/0170423 A1Korea Institute of Science & Technology Information
- Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating9 Feb 2023US 2023/0045758 A1Zeno Semiconductor, Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Memory using insulator traps313US 6,545,314 B2Micron Technology, Inc. · 2003
- Non-volatile semiconductor memory device with facility of storing tri-level data274US 5,021,999 AMitsubishi Denki Kabushiki Kaisha · 1991
- High density flash memory249US 5,936,274 AMicron Technology, Inc. · 1999
- High density flash memory241US 6,143,636 AMicron Technology, Inc. · 2000