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US 11,769,542 B2Granted
Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator
AssigneeMicron Technology, Inc.
InventorsKamal M. Karda, Chandra Mouli, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy
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Abstract
A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.
Claims15
A field effect transistor construction, comprising:
- a semiconductive channel core;
- a source/drain region at opposite ends of the channel core;
- a gate construction proximate a periphery of the channel core, the gate construction comprising:
- outer conductive material proximate the channel core periphery;
- outer ferroelectric material proximate the channel core periphery radially inward of the outer conductive material;
- inner conductive material proximate the channel core periphery radially inward of the outer ferroelectric material;
- and
- inner dielectric radially between the inner conductive material and the channel core, the inner dielectric having local regions radially there-through of different radial thickness at different circumferential locations relative to the channel core periphery;
- and
- wherein the local regions having different radial thickness have different capacitance relative one another.
7 more elements
Dependencies are inferred from the claim text.