H10D 30/689
Vertical floating-gate igfets
Official title: {Vertical floating-gate IGFETs}
H10D30/689 (Vertical floating-gate igfets) appears on 584 US grants and 665 published applications in this corpus.
Search patents in H10D- Granted patents
- 584
- Published applications
- 665
- Assignees
- 94
- Inventors
- 833
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 3 |
| 2003 | 1 | 1 |
| 2004 | 0 | 3 |
| 2005 | 2 | 0 |
| 2006 | 2 | 2 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 2 | 5 |
| 2010 | 1 | 2 |
| 2011 | 1 | 16 |
| 2012 | 9 | 37 |
| 2013 | 31 | 46 |
| 2014 | 52 | 81 |
| 2015 | 71 | 83 |
| 2016 | 86 | 58 |
| 2017 | 51 | 37 |
| 2018 | 38 | 32 |
| 2019 | 41 | 45 |
| 2020 | 40 | 46 |
| 2021 | 43 | 33 |
| 2022 | 23 | 36 |
| 2023 | 27 | 29 |
| 2024 | 26 | 26 |
| 2025 | 18 | 19 |
| 2026 | 15 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Engineered dielectric profile for high aspect-ratio 3D NAND structures18 Aug 2026US 12,713,902 B2Intel NDTM US LLC
- Semiconductor memory device11 Aug 2026US 12,707,632 B2Samsung Electronics Co., Ltd.
- Semiconductor device2 Jun 2026US 12,648,210 B2Rohm Co., Ltd.
- Method for corrupting data stored in a memory, and corresponding integrated circuit26 May 2026US 12,640,208 B2STMicroelectronics International N. V.
- Three-dimensional flash memory device and method for forming the same26 May 2026US 12,641,780 B2Winbond Electronics Corp.
- Semiconductor devices having through-insulating structures and data storage systems including the same8 Oct 2026US 2026/0314382 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device20 Aug 2026US 2026/0247619 A1SK hynix Inc.
- Split pillar memory architectures6 Aug 2026US 2026/0231421 A1Micron Technology, Inc.
- Semiconductor devices23 Jul 2026US 2026/0214899 A1Samsung Electronics Co., Ltd.
- Memory device having three-dimensional structure and method of operating the same23 Jul 2026US 2026/0214905 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Ultrahigh density vertical NAND memory device and method of making thereof296US 8,187,936 B2SanDisk Technologies LLC · 2012
- Ultrahigh density monolithic, three dimensional vertical NAND memory device275US 8,349,681 B2SanDisk Technologies LLC · 2013
- Flash memory with ultra thin vertical body transistors215US 6,424,001 B1Micron Technology, Inc. · 2002